650V Enhanced GaN Power Transistor

High Current
High Breakdown Voltage
High Frequency Switching Converter
High Density Converter
GaN Transistor

650V

Part Number RDS(on)(mΩ) VDS.Max(V) Qg Package type Dimensions(mm) Datasheet
FET-E6007PB010 65 650 5.33 PDFN 8 * 8 * 0.85 Contact Us
FET-E6007PB020 65 650 5.57 PDFN 8 * 8 * 0.85 Contact Us
FET-E6007PD020 55 650 5.02 PDFN 8 * 8 * 1.05 Contact Us
FET-E6015PB010 123 650 2.65 PDFN 8 * 8 * 0.85 Contact Us
FET-E6015PB020 123 650 2.65 PDFN 8 * 8 * 0.85 Contact Us
FET-E6005PB020 50 650 6.4 DFN 8 * 8 Contact Us
FET-E6005PB010 50 650 6.83 TOLL 11.7 * 9.9 Contact Us
FET-E6007PB021 65 650 5.56 DFN 8 * 8 Contact Us
FET-E6007PB030 70 650 5.41 TOLL 11.7 * 9.9 Contact Us
FET-E6025PB010 25 650 TOLL 11.7 * 9.9 Contact Us
25 650 TOLT 15 * 9.9 Contact Us
GaN SiP

650V

Part Number RDS(on)(mΩ) VDS.Max(V) Package type Dimensions(mm) Datasheet
SIP-P60SB010 150 650 VQFN 8 * 8 * 1 Contact Us
SIP-P60SB020 70 650 VQFN 8 * 8 * 1 Contact Us
SIP-P60SB030 50 650 VQFN 8 * 8 * 1 Contact Us